Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: III-V semiconductors (other than nitrides)
HL 9.1: Vortrag
Montag, 12. März 2018, 15:00–15:15, EW 202
Resonant inelastic light scattering on indirect excitons and overflow of dipolar traps at high magnetic fields — •Lukas Sponfeldner1, Sebastian Dietl1, Lukas Sigl1, Katarzyna Kowalik-Seidl2, Dieter Schuh3, Werner Wegscheider4, Jörg Kotthaus2, Aron Pinczuk5, Ursula Wurstbauer1, and Alexander W. Holleitner1 — 1Walter Schottky Institut und Physics Department, Am Coulombwall 4a, Garching, TU Munich, Germany. — 2Center for Nanoscience and Fakultät für Physik, LMU, Germany. — 3Institute of Experimental and Applied Physics, University of Regensburg, Germany. — 4Solid State Physics Laboratory, ETH Zurich, Switzerland. — 5Department of Applied Physics and Applied Mathematics, Columbia University, New York, USA.
We present resonant inelastic light scattering (RILS) studies to explore the many-body quantum phase diagram and respective phase transitions of indirect excitons (IXs). The photogenerated IXs are confined in very clean GaAs double quantum well structures and electrostatically trapped by local gate electrodes. The IXs coexist with a photogenerated excess 2D hole system located in one of the quantum wells. The RILS studies of such ensembles reveal a collective excitation mode at the transferred in-plane momentum and an energy of only 0.44 meV at low temperatures. The mode is consistent with a plasma excitation of the 2D excess holes coherently coupled to the IXs.