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15:00 |
HL 9.1 |
Resonant inelastic light scattering on indirect excitons and overflow of dipolar traps at high magnetic fields — •Lukas Sponfeldner, Sebastian Dietl, Lukas Sigl, Katarzyna Kowalik-Seidl, Dieter Schuh, Werner Wegscheider, Jörg Kotthaus, Aron Pinczuk, Ursula Wurstbauer, and Alexander W. Holleitner
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15:15 |
HL 9.2 |
Carbon doping of GaAs grown by molecular beam epitaxy on GaAs(100) and GaAs(111)B — •Alexander Trapp, Tobias Henksmeier, and Dirk Reuter
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15:30 |
HL 9.3 |
Magnetic properties of InP wurtzite nanowires from theory: g-factors and exciton Zeeman splitting — •Paulo E. Faria Junior, Davide Tedeschi, Marta De Luca, Benedikt Scharf, Antonio Polimeni, and Jaroslav Fabian
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15:45 |
HL 9.4 |
Mutual Indirect Exciton Interactions in Double Quantum Well Stacks — •Colin Hubert, Yifat Baruchi, Yotam Harpaz, Kobi Cohen, Ronen Rapaport, and Paulo Santos
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16:00 |
HL 9.5 |
Phase coherent transport and spin-orbit coupling in GaAs/InSb core/shell nanowires — •Anna Linkenheil, Patrick Zellekens, Torsten Rieger, Nataliya Demarina, Hans Lüth, Mihail Ion Lepsa, Detlev Grützmacher, and Thomas Schäpers
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16:15 |
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15 min. break.
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16:30 |
HL 9.6 |
AlAsSb/GaSb Double Barrier Quantum Well Resonant Tunneling Diodes with Ternary Prewell-Emitters — •Andreas Pfenning, Georg Knebl, Robert Weih, Manuel Meyer, Andreas Bader, Monika Emmerling, Lukas Worschech, and Sven Höfling
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16:45 |
HL 9.7 |
Increased sensitivity of spin noise spectroscopy using homodyne detection in n-doped GaAs — •Aleksandr Kamenskii, Mikhail Petrov, Dmitry Smirnov, Manfred Bayer, and Alex Greilich
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17:00 |
HL 9.8 |
Infrared nanoscopy on Si-doped GaAs-InGaAs core-shell nanowires — •Denny Lang, Leila Balaghi, Emmanouil Dimakis, René Hübner, Susanne C. Kehr, Lukas M. Eng, Stephan Winnerl, Harald Schneider, and Manfred Helm
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17:15 |
HL 9.9 |
Properties of In-Plane Gate transistors for use in sensing gaseous and liquid dielectric environments. — •Benjamin Feldern, Sascha R. Valentin, Arne Ludwig, and Andreas D. Wieck
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