Berlin 2018 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: III-V semiconductors (other than nitrides)
HL 9.9: Vortrag
Montag, 12. März 2018, 17:15–17:30, EW 202
Properties of In-Plane Gate transistors for use in sensing gaseous and liquid dielectric environments. — •Benjamin Feldern, Sascha R. Valentin, Arne Ludwig, and Andreas D. Wieck — Angewandte Festkörperphysik, Ruhr-Universität Bochum, Bochum, Germany
For the purpose of sensing dielectrics, In-Plane-Gate (IPG) transistors are written in Gallium-Arsenide based high-electron-mobility-transistor (HEMT) structures using focused ion beam (FIB) implantation. These FIB-implanted IPGs are to be used to sense dielectrics in different compositions.
Using the Petrosyan-Stikh formula for the depletion length of the implanted region in addition to the representation of the IPG by a parallel-plate geometry by de Vries and Wieck, the dielectric constant of the environment can be calculated and analysed. Additionally, varied mobility of the underlying HEMT is taken into consideration. We demonstrate an influence of the dielectric on the properties, while a quantitative analysis still shows some deviations.
Beyond this, also surface treatments were performed and tested on their influence of the sensing capability. It was found that surface depletion was increased by both exposure of the IPGs to a N2-Plasma as well as dipping in N2H8S.
Simulations of the electric field reveal the influence of the geometry and the charge carrier density in the HEMT.