Regensburg 2019 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 22: Thin Film Applications
DS 22.5: Vortrag
Donnerstag, 4. April 2019, 10:30–10:45, H39
Noise properties of oxygen engineered HfO2−x based Resistive Random Access Memory devices — •Eszter Piros1, Martin Lonsky2, Stefan Petzold1, Eric Jalaguier3, Emmanuel Nolot3, Christelle Charpin3, Jens Müller2, and Lambert Alff1 — 1Institute of Materials Science, Advanced Thin Film Technology, Technische Universität Darmstadt, Darmstadt, Germany — 2Institute of Physics, Goethe-University Frankfurt, Frankfurt am Main, Germany — 3CEA, LETI, Grenoble, France
Resistive Random Access Memory (RRAM) is one of the most promising candidates amongst emerging non-volatile memories because of their fast read/write speed, high endurance, and good retention properties. One of the biggest challenges, however, is to improve device reliability and variability, highlighting the necessity of a comprehensive physical picture on the resistive switching mechanism. Therefore, we comparatively investigated the noise properties of oxygen engineered stoichiometric and highly oxygen deficient hafnia [1], by electrical fluctuation spectroscopy to explore the physical nature of conduction in the high and low resistive state, finding a strong dependence on stoichiometry, voltage bias amplitude, and DC cycling. The investigations were carried out in both the time- and frequency domain. The observation of multilevel- and anomalous random telegraph noise and corresponding Lorentzian spectra are also discussed.
[1] S. U. Sharath, Adv. Funct. Mater. 27, 1700432 (2017)