Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 10: Quantum information systems

HL 10.4: Vortrag

Montag, 1. April 2019, 15:45–16:00, H36

Polytypism induced sign reversal in zero-field splitting of silicon vacancies in 6H-SiC — •Victor Soltamov1, Vladimir Dyakonov1, Timur Biktagirov2, Wolf Gero Schmidt2, Uwe Gerstmann2, Boris Yavkin3, Sergei Orlinskii4, and Pavel Baranov51Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany — 2Lehrstuhl für Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany — 33rd Institute of Physics, University of Stuttgart, 70569 Stuttgart, Germany — 4Kazan Federal University, 420008 Kazan, Russia — 5Ioffe Institute, 194021 St. Petersburg, Russia

Negatively charged S = 3/2 silicon vacancy centers in Silicon Carbide (SiC) are one of the candidates featuring unique functionality for quantum sensing [1, 2], as well as for quantum communication [3]. The polytypism of SiC, i.e., the ability to form many different crystal structures, appears as an additional lever to reach the ideal combination of magnetic and optical characteristics. Here the properties of the zero-field splitting (ZFS) of these centers in 6H-SiC are uncovered by means of EPR and ENDOR techniques, combined with first-principles calculation. We show that the centers possess not only significantly different absolute values of ZFS, but also differ in their sign. This diversity is rationalized by a flattened/elongated character of their spin density distribution.

[1] D. Simin et al., Phys. Rev. B 95, 161201(R) (2017).

[2] S.-Y. Lee et al., Phys. Rev. B 92, 115201 (2015).

[3] S. E. Economou and P. Dev, Nanotechnology 27, 504001 (2016).

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