Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 11: Focus: Advanced TEM spectroscopy - low energy excitations and chemical composition at high resolution (joint session KFM/HL)

HL 11.5: Talk

Monday, April 1, 2019, 16:30–16:50, PHY 5.0.20

How sharp are atomically sharp interfaces in complex functional oxide heterostructures? — •Peter A. van Aken — Max Planck Institute for Solid State Research, Stuttgart Center for Electron Microscopy, Stuttgart, Germany

Complex functional oxide heterostructures have been serving as a multi-directional platform for engineering novel interface functionalities. Recent technical improvements of the epitaxial growth techniques enable fabricating high-quality thin films and heterostructures. The phenomena occurring at their interfaces can be tailored depending on the choice of the constituents. The key factor dominating the interface functionalities is the control of interface sharpness. Therefore, examining the interfacial structure and chemistry is vital for correlating with the underlying physical properties.

High-resolution analytical STEM investigations on various complex functional oxide heterostructures exhibiting different interface sharpness and different functionalities will be presented yielding that i) the growth technique has a direct impact on the structural and chemical sharpness of the interfaces, ii) two-dimensional doping of La2CuO4-based multilayers results in different dopant distribution at both sides of the interfaces which induces different superconducting mechanisms, iii) the choice of the dopant directly affects the interface sharpness. The effect of dopant distribution at interfaces on physical properties will be discussed.