Regensburg 2019 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 12: HL Poster I

HL 12.11: Poster

Montag, 1. April 2019, 17:30–20:00, Poster E

Raman spectra vs. transport properties in graphene field-effect transistors suitable for applications in ultrasensitive biodetection — •Daniel Hüger¹, David Kaiser¹, Christof Neumann¹, Thomas Weimann², and Andrey Turchanin¹ — ¹Institute of Physical Chemistry, Friedrich-Schiller-University Jena, 07743 Jena, Germany — ²Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany

For applications of graphene field-effect transistors (GFETs) in ultrasensitive biodetection the devices must have a high charge carrier mobility, a low doping level as well as an absence of the transfer curves hysteresis. To study these properties, extensive and time-consuming transport measurements in vacuum are typically required. Here, in order to find a faster and non-invasive method for this assessment, we use Raman spectroscopy to characterize GFETs fabricated on Si/SiO₂ wafers and correlate the spectroscopy and transport data. We present an analysis of over 600 FET devices made by electron-beam lithography from single-layer graphene produced via chemical vapor deposition (CVD) by three different manufacturers. Employing a spectral resolution of ∼10 cm⁻¹, we acquire the Raman data within only 3 minutes per sample. We analyze the relationships between hysteresis in the transfer curves, position of the Dirac-point and charge carrier mobility in the GFETs with position of the 2D-, D- and G-peak, their full width half maximum (FWHM) and intensity ratios.