Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: HL Poster I
HL 12.16: Poster
Montag, 1. April 2019, 17:30–20:00, Poster E
Metal gate vs graphene gate in two-dimensional (2D) MoS2 FET — •Vaishnavi Kateel1,2, Zahra Fekri1,2, Phanish Chava1,2, Himani Arora1,2, Kenji Wanatnabe3, Takashi Taniguchi3, and Artur Erbe1 — 1Helmholtz-Zentrum Dresden Rossendorf,Bautzner Landstraße 400, 01328 Dresden — 2Technische Universität Dresden, 01062 Dresden Germany — 3National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
The extensive scaling of semiconducting devices caused the search for alternative materials as the conventional semiconductor reached the edge of their physical limits. Huge research in 2D material was driven by their wide range of electrical properties from metallic to insulating. The interlayer van der Waals interaction allowed 2D materials to be exfoliated and stacked in order to form heterostructure with little lattice mismatch. Layer dependent electronic band structure and the absence of surface dangling bond made semiconducting MoS2 as a good channel material in our 2d transistor. Graphene(Gr) source/drain contacts were used as transport across the schottky barrier of Gr/MoS2 interface can be altered by gate voltage and current bias. Excellent properties like wide bandgap, atomic flatness and absence of charge traps makes hexagonal Boron Nitride (hBN) a better dielectric layer for our 2D FET compared to SiO2 which shows large hysteresis and low mobility. Furthermore, hBN can be used as protection by encapsulating 2D semiconductors. We demonstrate a 2D heterostructure MoS2 transistor with graphene gate electrode and compare its electrical characteristics with metal top-gate electrode MoS2 transistor.