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Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 12: HL Poster I

HL 12.30: Poster

Montag, 1. April 2019, 17:30–20:00, Poster E

Topological surface states in α -Sn: from 3D Dirac semimetal to quasi-2D few-layer stanene — •Victor A. Rogalev1, Johannes Jehn1, Felix Reis1, Florian Adler1, Maximilian Bauernfeind1, Jonas Erhardt1, Liam B. Duffy2, Thorsten Hesjedal2, Moritz Hoesch3, Gustav Bihlmayer4, Jörg Schäfer1, and Ralph Claessen11Physikalisches Institut und Röntgen Center for Complex Materials Systems, Universität Würzburg, 97074 Würzburg, Germany — 2Clarendon Laboratory, Physics Department, Oxford University, OX1 3PU, United Kingdom — 3Diamond Light Source, Didcot, OX11 0DE, United Kingdom — 4Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich,52428 Jülich, Germany

We report on the TSS evolution in α -Sn films with different thickness and surface orientation, studied by angle-resolved photoemission. α -Sn films were grown epitaxially on InSb substrates (0.14% biaxial compressive strain) with (001)- and (111)-surface orientations, which renders a Dirac semimetal phase. For the (001)-oriented α -Sn films we observe quantum well effects in the electronic structure, while the Dirac point (DP) remains mainly unchanged down to ∼2.5 nm. The DP in (111)-oriented α -Sn was found to be 200 meV below the Fermi level for 10-nm-thick α -Sn film, which enabled us to observe the hybridization gap opening in TSS for lower α -Sn film thicknesses. The crossover to a quasi-2D few-layer stanene electronic structure is accompanied by a disappearance of the TSS spectral weight and a gap opening, in agreement with our DFT calculations of the electronic bandstructure.

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