Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: HL Poster I
HL 12.35: Poster
Montag, 1. April 2019, 17:30–20:00, Poster E
Improving the spin coherence of shallow nitrogen-vacancy centers (NVs) by CVD-diamond overgrowth — •Christoph Findler1,2, Christian Osterkamp1, Johannes Lang1, Josef Souček3, Milos Nesladek3, and Fedor Jelezko1 — 1Institut für Quantenoptik, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany. — 2Daimler AG, RD/EBT, HPC U028, Wilhelm-Runge-Str. 11, D-89081 Ulm, Germany. — 3Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek, Belgium.
The negatively charged nitrogen-vacancy center (NV) is a paramagnetic defect in diamond with long spin coherence times at room temperature. The spin-dependent fluorescence of the NV enables optical polarization, read-out and manipulation of single or ensembles of spins. For quantum technology applications like magnetic resonance imaging [1] and magnetic field sensing on the nanoscale [2] the NVs have to be close to the diamond’s surface. To minimize the influence of near-surface noise and defects we combine two state-of-the-art NV production methods, namely plasma enhanced chemical vapor deposition (PECVD) [3] and nitrogen ion implantation with precise depth control [4]. We produce shallow NV centers by implantation into 12C-enriched (100) diamond and overgrow then the NVs with a thin 12C-enriched diamond capping layer using PECVD [4]. [1] T. Staudacher et al., Science 339, 561-563 (2013). [2] S. Schmitt et al., Science 356, 832-837 (2017). [3] C. Osterkamp et al., Appl. Phys. Lett. 106, 113109 (2015) [4] T. Staudacher et. al., Appl. Phys. Lett. 101, 212401 (2012)