Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 12: HL Poster I

HL 12.38: Poster

Montag, 1. April 2019, 17:30–20:00, Poster E

C8-BTBT air gap field-effect transistors — •Michael Bretschneider, Bernd Büchner, and Yulia Krupskaya — IFW Dresden, Germany

Despite the fact that organic semiconductors are already used to produce large scalable electronic devices, basic mechanisms of charge transport in these materials are not fully understood. The field-effect transistor is a common device to study charge transport in semiconductors by creating a conductive channel at the semiconductor/insulator interface. C8-BTBT is the workhorse of a new type of high hole mobility organic semiconductors. As a matter of fact there are several different mobilities reported in literature for comparable device structures of a C8-BTBT transistor. Electrical and mechanical distortion of the interface region caused by the solid dielectric cannot be excluded in these measurements, so that it remains unclear what the intrinsic mobility value of C8-BTBT is. With the help of an air gap field effect transistor we get rid of these distortions by using air/vacuum as an insulating layer between gate electrode and organic semiconductor. We investigate highly ordered films of C8-BTBT, grown by vapor phase transport. After the growth these films are flipped around and laminated with the upper surface on top of the air/vacuum gap stamp. In such a configuration it is possible to measure the current in the organic semiconductor which is not influenced by a gate dielectric. These measurements allow to get a closer look into the intrinsic transport behaviors of C8-BTBT.