Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: HL Poster I
HL 12.42: Poster
Montag, 1. April 2019, 17:30–20:00, Poster E
Concept of multi-stage ballistic rectifiers — •Nina Niedworok and Ulrich Kunze — Electronic Materials and Nanoelectronics, Ruhr-Universität Bochum, 44780 Bochum, Germany
We analyze the behavior of input-current addition in a multi-stage ballistic rectifier implemented on Si/SiGe heterostructures. In a preceding work [1] we demonstrated a fundamental difference between two-stage ballistic rectifiers with large (740 nm) and small (340 nm) center-to-center separation between the current-injector pairs. While for large separation the output voltage Vout of both stages add up as Vout=α 12 Iin12+α 22 Iin22 (where Iin1, Iin2 are the input currents and α 1, α 2 denote the curvature coefficients) in closely-spaced stages the input currents are added leading to a characteristic which is accurately described by Vout=(α 1 Iin1+ α 2 Iin2)2. More generally, this results in an excess voltage Voutexc=2β α 1 α 2 Iin1 Iin2, where β descibes the degree of overlap between the injected charge clouds of both stages, 0 ≤ β ≤ 1. In the present work we present nanoscale geometries of multi-stage ballistic rectifiers which promise maximum excess voltage due to current addition. For n-stage rectifiers we present a model which describes the synergetic behavior. The aim of the work is to implement multi-stage ballistic rectifiers which show output voltages of technical relevance for high frequency applications with the smallest possible numbers of injectors on Si/SiGe heterostructures.
[1] J. von Pock, U. Wieser, and U. Kunze, Phys. Rev. Applied 7, 044023 (2017).