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Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 12: HL Poster I

HL 12.45: Poster

Montag, 1. April 2019, 17:30–20:00, Poster E

In situ study of the surface preparation of metamorphic GaAsP buffers for III-V-on-Si integration — •Ammar Tummalieh, Agnieszka Paszuk, Oliver Supplie, Alexander Heinisch, Peter Kleinschmidt, and Thomas Hannappel — Institute for Physics, University of Technology, Ilmenau, Germany

Low defect GaAs1−xPx graded buffers grown on Si enable highly efficient III-V-on-Si multi-junction solar cells. Here, GaAs1−xPx graded buffers were grown by metalorganic chemical vapor phase deposition on GaP substrates to explore the possibility of in situ growth control. To this end, the GaAsP growth was monitored with reflection anisotropy spectroscopy (RAS). Ultra-high vacuum surface-sensitive methods were used to identify the surface reconstruction and chemical composition in dependence on the GaAsP stoichiometry and post-growth surface preparation routes. The strain relaxation of each layer was measured by high-resolution x-ray diffraction. We show that the As content of individual GaAsP layers can be quantified in situ during the growth by RAS: With increasing As supply, a peak close to the GaP E1 critical point energy shifts towards GaAs E1 at lower energy. The atomic structure of the GaAsP surfaces depends on the processing routes. GaAsP surfaces annealed at 500C are V-rich whereas annealing at 700C leads to Ga-rich surfaces. The preparation of the surfaces can be optimized in situ via their RAS fingerprints.

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