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Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 12: HL Poster I

HL 12.46: Poster

Montag, 1. April 2019, 17:30–20:00, Poster E

Heterostructures of 2D Materials and Organic Semiconductors for Ambipolar Field Effect Transistors — •Sirri Batuhan Kalkan1, Henrik Hecht1, Antony George2, Andrey Turchanin2,3, and Bert Nickel11Faculty of Physics and CeNS, Ludwig-Maximilians-Universität München, 80539 Munich, Germany — 2Institute of Physical Chemistry, Friedrich-Schiller-Universität Jena, 07743 Jena, Germany — 3Jena Center for Soft Matter (JCSM), 07737 Jena, Germany

We investigated the electronic and optoelectronic properties of a MoS2 field effect transistor (FET) and a pentacene/MoS2 heterostructure as an ambipolar FET. Heterostructures are constituted by transferring a pentacene sheet on top of the MoS2 layer. This transfer is enabled by using low energy electron beams to crosslink the first couple of layers of pentacene increasing mechanical stability. Therefore, less defective surfaces are achievable in compared to photoresist or PMMA assisted transfer. In previous work, we introduced the technique of scanning photocurrent microscopy (SPCM) for spatially identifying defect sites within an OFET channel, as well as regions of low contacts. Now we employ this technique to the pentacene/MoS2 heterojunction. Here, pentacene serves as p-type and MoS2 as n-type semiconductor. Tuning the excitation wavelength allows to separate the contributions of the two semiconductor layers. Furthermore, the effect of surface adsorbates at ambient condition in comparison to N2 atmosphere is studied. Understanding how to operate at ambient conditions will be valuable for design of transistors and photodetectors.

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