Regensburg 2019 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 12: HL Poster I

HL 12.5: Poster

Montag, 1. April 2019, 17:30–20:00, Poster E

Optical Contrast Analysis and Electrical Properties of Thin ZrSe₃-Films — •Lars Thole¹, Christopher Belke¹, Sonja Locmelis², Johannes C. Rode¹, Peter Behrens², and Rolf J. Haug¹ — ¹Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany — ²Institut für Anorganische Chemie, Leibniz Universität Hannover, 30167 Hannover, Germany

In recent years interest in two-dimensional materials has been strong. They have a layered structure with unique properties. One type of layered materials are Transition Metal Trichalcogenides of the form MX₃, where M is a transition metal and X is a chalcogenide [1, 2]. We concentrate on the semiconductor ZrSe₃ [2, 3]. It was exfoliated to get thin flakes with only a few layers. The flakes were characterized with atomic force microscopy and optical microscopy to determine a contrast relation for the height. Through electrical measurements on contacted flakes the mean free path for the material was determined. Further measurements to determine the mobilities of the flakes were conducted.

[1] J. O. Island et al., 2D Materials, 4, 0220033 (2017).

[2] J. Dai et al., WIREs Comput. Mol. Sci., 6, 211-222 (2016).

[3] Y. Jin et al., Phys. Chem. Chem. Phys., 17, 18665 (2015).