Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: HL Poster I
HL 12.64: Poster
Montag, 1. April 2019, 17:30–20:00, Poster E
Magnetotransport in nanostructured narrow-gap semiconductors — •Olivio Chiatti1, Christian Riha1, Johannes Boy1, Aron Castro Martinez1, Sergio Pezzini2, Steffen Wiedmann2, Christian Heyn3, Wolfgang Hansen3, and Saskia F. Fischer1 — 1Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 2High Field Magnet Laboratory, Radboud University Nijmegen, 6525ED Nijmegen, The Netherlands — 3Institut für Angewandte Physik, Universität Hamburg, 20355 Hamburg, Germany
Transport properties of low-dimensional electron systems can be effectively investigated by measurements in magnetic fields.
We investigate the magnetotransport of semiconductor heterostructures and nanostructures with spin-orbit interaction (SOI), under the influence of in-plane and out-of-plane electric fields.
We fabricated etched quantum point contacts (QPCs) embedded in Hall-bars with in-plane gates.
The Hall-bars and the constrictions were defined by micro-laser photolithography and wet-chemical etching from an InGaAs/InAlAs quantum well with an InAs-inserted channel [1].
We have performed transport measurements at low temperatures in the combined QPC and Hall-bar structures in magnetic fields.
We show that the gate-voltages can tune the filling-factor mismatch between bulk Hall-bar and QPC.
We observe the crossover from reflection to transmission of the quantum Hall edge channels at the QPC and tunneling across the QPC between reflected edge states, which depends on the magnitude and direction of the in-plane electric field.
[1] Chiatti et al., Appl. Phys. Lett. 106, 052102 (2015).