Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 12: HL Poster I

HL 12.65: Poster

Montag, 1. April 2019, 17:30–20:00, Poster E

1-D and 2-D Multi-Gate Devices: Tailoring the Potential Landscape on the Nanoscale — •Thomas Grap^1,2 and Joachim Knoch¹ — ¹Institute of Semiconductor Electronics, RWTH Aachen, Germany — ²Peter Grünberg Institute 11, FZ Jülich, Germany

One-dimensional (1-D) materials such as nanowires (NW) and carbon nanotubes (CNT) as well as two-dimensional (2-D) materials like graphene and MoS₂ have attracted a great deal of attention as buildings blocks of future nanoelectronics systems. NWs and CNTs enable 1-D electronic transport. Considering sufficient gate control, devices based on quantum effects (e.g. quantum dots) can be formed within these nanostructures. Furthermore 2-D materials exhibit excellent electronic transport due to a very high electron mobility. In this study we examined the electronic transport properties of 1-D and 2-D nanostructures by utilizing a buried multi-gate architecture where a large number of gates are used (order of 10 and more). The multi-gate substrate allows to tailor the potential landscape of the nanostructures on the nanoscale. The influence of gate length and inter-gate distances as well as different top-dielectrics such as SiO₂ or Al₂O₃ are investigated. Various device configurations (e.g. RTD, superlattice-FET) are realized for different materials by applying appropriate voltages to the multi-gates. Measurements of field effect transistors at room temperature as well as low temperatures are shown.