Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 12: HL Poster I

HL 12.68: Poster

Montag, 1. April 2019, 17:30–20:00, Poster E

Highly doped silicon for photonic and plasmonic applications — •Jura Rensberg, Kevin Wolf, Martin Hafermann, and Carsten Ronning — Institute of Solid State Physics, Friedrich Schiller University Jena, Germany

For some time now, laser processing is a key technology in basic solid-state and material science research with a manifold of industrial applications, such as recrystallization and dopant activation in semiconductor industries. The basis of laser annealing is the deposition of large amounts of energy (a few J/cm²) over very short time scales, which leads to surface layer melting followed by rapid resolidification. Pulsed laser annealing of ion-implanted silicon leads to the formation of supersaturated alloys with maximum substitutional dopant concentrations far greater than equilibrium solubility limits. Here, we show the opto-electronical properties of silicon doped to the laser-annealing-induced solubility limit with respect to photonic and plasmonic applications.