Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: HL Poster I
HL 12.70: Poster
Montag, 1. April 2019, 17:30–20:00, Poster E
Control of the photoluminescence of the silicon vacancy color center in 4H-silicon carbide by electric fields — •Lena Bergmann, Maximilian Rühl, Christian Ott, Michael Krieger, and Heiko B. Weber — Lehrstuhl für Angewandte Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany
Color centers in Silicon carbide (SiC) are promising candidates for novel quantum technology based on single photon sources [1]. In this study we report on the control of the photoluminescence (PL) of the silicon vacancy (VSi) color center in 4H-SiC by electric fields at low temperatures. In particular, we monitored the ensemble PL depending on electric field strength and field direction. Structured epitaxial graphene is used as transparent electrodes at the surface to drive a static electric field. The VSi color centers under investigation are created by proton implantation [2]. We observe a Stark splitting of the V1′ line of about 2.4 meV at a field strength of about 0.7 V/cm. In addition, the PL intensity of V1′ and V1 changes in the presence of the field. In contrast, the V1 line does not display any splitting.
[1] S. Castelletto et. al. Nature Materials 13, 151-156 (2013)
M. Rühl et. al. Appl. Phys. Lett. 113, 122102 (2018)