Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 16: Focus Session: Oxide Semiconductors for Novel Devices III
HL 16.1: Vortrag
Dienstag, 2. April 2019, 09:30–09:45, H34
Mechanical properties of HfO2−x and ZrO2−x suboxides — •Konstantin Z. Rushchanskii, Stefan Blügel, and Marjana Ležaić — Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
Hafnia is a well-known high-k material that is compatible with silicon technology. Both hafnia and its crystallographic sibling, zirconia, are intensively investigated as resistive switching materials for the next generation non-volatile memory and potential neuromorphic computing applications. Zirconia-based ceramics are widely employed in industry and medicine because of their high strength and fracture toughness. Observed shape-memory effect is related to the martensitic transition from tetragonal to monoclinic phase in zirconia. A fundamental understanding of the mechanical properties and stability of these materials is, therefore, very important for their practical applications.
Recently [1,2], we reported the new suboxide phases in Hf-O and Zr-O systems, which contain ordered vacancy chains, a desired property for the resistive switching devices. Here we focus on the mechanical properties of these phases. We will report a prediction of superelastic behavior of these phases and discuss the role of ordered oxygen vacancies in the mechanical properties of hafnia and zirconia. We acknowledge the support by DFG via SFB 917 "Nanoswitches".
[1] K.Z. Rushchanskii, S. Blügel, M. Ležaić, Phys. Rev. Materials 2, 115002 (2018); [2] K.Z. Rushchanskii, S. Blügel, M. Ležaić, Faraday Discussions (2019).