Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 16: Focus Session: Oxide Semiconductors for Novel Devices III

HL 16.10: Vortrag

Dienstag, 2. April 2019, 12:00–12:15, H34

Realization of MESFET and inverter devices based on Mg-doped In₂O₃ — •Fabian Schöppach, Robert Karsthof, Daniel Splith, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix Bloch Institute for Solid State Physics, Linnéstraße 5, 04103 Leipzig, Germany

Indium oxide (In₂O₃) has promising physical properties such as high conductivity and transparency in the visible. However In₂O₃ is not used in active devices such as diodes or transistors yet. This is due to its tendency to form an electron accumulation layer on its surface preventing the formation of a significant depletion layer.

In this work, metal-semiconductor field-effect transistors (MESFETs) and inverters are presented for the first time. These are based on thin In₂O₃ films with various Mg doping concentrations. These films are grown via high-temperature pulsed laser deposition in oxygen atmosphere. For source and drain contacts gold is deposited via inert ambient sputtering. Schottky gate diodes are fabricated in a reactive sputter process which is a requirement for obtaining rectifying contacts to In₂O₃ [1,2]. Transistors with on-off ratios of over 5 orders of magnitude are reported.

[1] H. v. Wenckstern, et al. APL Mater. 2, 046104 (2014)

[2] Th. Schultz, et al. Phys. Rev. Appl. 9, 064001 (2018)