Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 16: Focus Session: Oxide Semiconductors for Novel Devices III
HL 16.11: Vortrag
Dienstag, 2. April 2019, 12:15–12:30, H34
Integrated Logic Circuits Based on Amorphous Zinc-Tin-Oxide Thin Films Processed at Room Temperature — •Oliver Lahr, Sofie Vogt, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Semiconductor Physics Group, Leipzig, Germany
Currently there exists an increasing demand for low cost electronics and novel devices based on sustainable materials. Amorphous zinc-tin-oxide (ZTO) is a promising candidate for such technology since it consists of abundant, non-toxic elements and can be deposited at room temperature. Recently, the first metal field-effect transistors (MESFETs) as well as inverters based on amorphous ZTO channels have been reported [1,2].
We present Schottky diode FET logic (SDFL) inverters and SDFL ring oscillators based on MESFETs and junction field-effect transistors using amorphous n-type ZTO as channel material. The channels were deposited at room temperature by radio frequency long throw magnetron sputtering using a target with a 67 % SnO2 and 33 % ZnO composition. MESFET-based inverters show high peak gain magnitudes up to 330 at an operation voltage of 3 V with uncertainty levels below 113 mV. Single stage delay times down to 1.9 µs at VDD = 10 V are observed for ring oscillators based on our ZTO-MESFETs.
Dang et al., Appl. Phys. Lett., 110, 7, 2017.
Vogt et al., Appl. Phys. Lett., 113, 13, 2018.