Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 16: Focus Session: Oxide Semiconductors for Novel Devices III
HL 16.4: Vortrag
Dienstag, 2. April 2019, 10:15–10:30, H34
Simulation of retention and endurance in memristive devices — •Max Huber1,2, Jörg Schuster2, and Michael Schreiber1 — 1Institute of Physics, Technische Universität Chemnitz, Chemnitz, Germany — 2Fraunhofer Institute for Electronic Nano Systems, Chemnitz, Germany
Memristors are promising candidates for next generation memory. For practical purposes nonvolatility and reliability of the switching process are crucial to build high performance memristive devices. These properties can be checked with retention and endurance tests.
In our contribution we demonstrate, how such tests can be performed based on state-of-the-art physical device models [1]. For this purpose, Poisson’s equation as well as drift-diffusion equation and continuity equation for electrons are solved selfconsistently for a one-dimensional device model. The movement of mobile donors and Joule heating of the device are considered as well. For the retention test, the device is switched from high resistance state (HRS) to low resistance state (LRS). In the following the device is read out for many times in order to check that this procedure does not change the topical state of the device. In contrast, the endurance test is performed by repeating the cycle HRS → read out → LRS → read out many times. We show how retention and endurance depend on device parameters like Schottky barriers, average donor concentration and mobility of charges.
[1] A. Marchewka, R. Waser, and S. Menzel: Proc. of 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 297-300, IEEE, 2015.