Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 16: Focus Session: Oxide Semiconductors for Novel Devices III
HL 16.5: Vortrag
Dienstag, 2. April 2019, 10:30–10:45, H34
Investigating the Memristive Behavior of Hydrothermally Grown TiO2 Nanorod Arrays — •Carola Ebenhoch1, Julian Kalb1, Joohyun Lim2, Christina Scheu2, and Lukas Schmidt-Mende1 — 1Department of Physics, University of Konstanz, 78457 Konstanz, Germany — 2Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf, Germany
Metal oxide memristors gained great attention during the last decade in using them for nonvolatile data storage, as well as for artificial synapses. The key reason for changing the resistance state of a metal oxide material is the possibility to form conductive filaments due to oxygen vacancies. The known mechanisms for building such filaments are unipolar, bipolar and complementary switiching, which are based on the electromigration of oxygen ions by applying an electric field and thermophoresis caused by Joule heating. The investigated hydrothermally grown TiO2 nanorod arrays (NRAs) show a combination of these effects, whereas dependence of the growth temperature on the memrisitive behavior of the NRAs will be demonstrated.