Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 16: Focus Session: Oxide Semiconductors for Novel Devices III

HL 16.7: Vortrag

Dienstag, 2. April 2019, 11:15–11:30, H34

Molecular beam epitaxy of SnO: Investigation of growth parameters including the comparison of a Sn and a SnO source — •Melanie Budde, Georg Hoffmann, and Oliver Bierwagen — Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany

Tin monoxide (SnO) is a p-type transparent semiconducting oxide (TSO) with a relatively high mobility for this class of materials. However, the SnO phase is instable and easily oxidized to SnO2 or reduced into metallic Sn.[1] On the other hand, SnO2 is a n-type TSO allowing a change in the carrier type only by controlling the oxygen stoichiometry x of SnOx. The investigations of Vogt[2] on the sub-oxide formation during the SnO2 growth also shows additional formation of SnO under metal-rich conditions. However, SnO was volatile at the growth temperature of 600 °C and desorbed from the substrate, thus not contributing to the film growth.

In this work, the desorption of SnO for growth temperatures below 600 °C are investigated using a line-of-sight quadrupole mass spectrometer to find a growth window for the formation of SnO. First, the SnO layers are grown and characterized using a SnO source. Secondly, different fluxes from a Sn cell in combination with an oxygen plasma are used. The grown layers are investigated using X-ray diffraction and energy dispersive x-ray spectroscopy.

[1] Zhang et al., J. Phys.: Condens. Matter 28 (2016). [2] Vogt and Bierwagen, Appl. Phys. Lett. 106 (2015).