Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 16: Focus Session: Oxide Semiconductors for Novel Devices III
HL 16.8: Vortrag
Dienstag, 2. April 2019, 11:30–11:45, H34
Structural, optical and electrical properties of orthorhombic (InxGa1−x)2O3 thin films — •A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiss, C. Krömmelbein, and M. Grundmann — Universität Leipzig, Felix-Bloch-Institut für Fest-körperphysik, Linnéstraße 5, 04103 Leipzig, Germany
Gallium oxide is a wide bandgap semiconductor appearing in various polymorphs. The orthorhombic κ-phase is of increasing interest because of its predicted large polarization of 23 µ C/cm2 [1] rendering it well suited for usage e.g. in high electron mobility transistors.
We present material properties of a κ-(InxGa1−x)2O3 thin film grown with continuous composition spread [2] by pulsed laser deposition on (00.1) Al2O3. As target segments we used Ga2O3/In2O3 doped with tin to facilitate formation of the orthorhombic phase [3], which was observed for an indium content up to x ∼ 0.35 enabling band gap engineering between 4.3 and 4.9 eV.
In order to induce n-type conductivity we doped a sample consisting of (In0.01Ga0.99)2O3 with 1.3 at.% zirconium and achieved electrically conducting thin films with room temperature conductivity of up to 0.1 S/cm.
Resulting samples were investigated by means of X-ray diffraction, transmission, energy-dispersive X-ray spectroscopy, atomic force microscopy, and electrical transport measurements.
Further, properties of Schottky barrier diodes are presented in dependence on the temperature.
M. B. Maccioni et al., Appl. Phys. Express 9, 04102 (2016).
H. v. Wenckstern et al., CrystEngComm 15, 10020 (2013).
M. Kneiß et al., APL Materials, Accepted (2018).