Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 2: Nitrides: Devices
HL 2.1: Vortrag
Montag, 1. April 2019, 09:30–09:45, H31
Performance degradation of AlGaN/GaN (MIS)-HEMTs grown on Silicon substrate under different operational stress-conditions — •anthony calzolaro1, rico hentschel1, andre wachowiak1, and thomas mikolajick1,2 — 1NaMLab GmbH, Dresden, Germany — 2TU Dresden IHM, Dresden, Germany
GaN-based high electron mobility transistors (HEMTs) are excellent candidates for next-generation power electronics due to superior material properties, such as large breakdown field, high electron sheet charge density and mobility. In particular, AlGaN/GaN heterostructures grown on large diameter Si-substrates enable delivering high performances at lower cost for component production. For high material quality of the heterostructure and high voltage capability complex GaN buffer layers are grown on Si. Several technology challenges are however still faced mainly related to charge trapping during device operation in the gate and drain regions[1] or in the GaN buffer.
In our study, static and dynamic measurement techniques are applied to Metal-Insulator-Semiconductor (MIS)-HEMT devices to access potential sources of traps and related effects on device performance. MIS-HEMT and HEMT structures are compared in terms of ON-resistance degradation and threshold voltage instability upon different bias stress conditions. The influence of the GaN buffer has been also investigated by substrate back bias methods[2] and focus is given to the kinetics of charge capture and emission processes. Our study enables better understanding of device operation and provides valuable feedback for material and device process technology.