Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 2: Nitrides: Devices
HL 2.11: Vortrag
Montag, 1. April 2019, 12:15–12:30, H31
AlGaN-based deep UV LEDs grown on high temperature annealed epitaxially laterally overgrown AlN/sapphire — •Norman Susilo1, Eviathar Ziffer1, Sylvia Hagedorn2, Leonardo Cancellara3, Sebastian Metzner4, Bettina Belde1, Frank Bertram4, Sebastian Walde2, Luca Sulmoni1, Martin Guttmann1, Tim Wernicke1, Jürgen Christen4, Martin Albrecht3, Markus Weyers2, and Michael Kneissl1,2 — 1Institute of Solid State Physics, Technische Universität Berlin, Germany — 2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany — 3Leibniz-Institut für Kristallzüchtung, Germany — 4Institute of Physics, Otto-von-Guericke-Universität Magdeburg, Germany
The structural and electro-optical properties of AlGaN-based deep ultraviolet light emitting diodes (UV-LEDs) on as grown and on high temperature annealed (HTA) planar AlN/sapphire and epitaxially laterally overgrown (ELO) AlN/sapphire with and without HTA are investigated and compared. After high temperature annealing LED heterostructures on both template types show improved structural and electro-optical properties. The output powers (measured on-wafer) of UV-LEDs emitting at 265 nm were 0.03 mW (planar AlN/sapphire), 0.8 mW (planar HTA AlN/sapphire), 0.9 mW (ELO AlN/sapphire), and 1.1 mW (HTA ELO AlN/sapphire) at 20 mA, respectively. These results show that HTA ELO AlN/sapphire templates provide a viable approach for the fabrication of efficient UV-LEDs, improving both the internal quantum efficiency and the light extraction efficiency.