Regensburg 2019 – wissenschaftliches Programm
HL 27.8: Vortrag
Mittwoch, 3. April 2019, 11:30–11:45, H36
Silicene passivation by few-layer graphene — •Jakob Genser1, Viktoria Ritter1, Daniele Nazzari1, Ole Bethge2, Emmerich Bertagnolli1, and Alois Lugstein1 — 1Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria — 2Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria
Silicene is of foremost interest for the development of next generation, high performance devices, due to its ultra-high carrier mobility combined with a tuneable bandgap and good integrateability into the current silicon based semiconductor industry. However, the synthesis of silicene remains challenging and thus far is only achieved under UHV conditions, whereas exposure to air leads to an immediate degradation. Therefore, the stabilization of silicene at ambient conditions is essential for its characterization, future processing and device integration. Here, we demonstrate the first in-situ encapsulation of 4x4 silicene grown on Ag(111) by exfoliated few-layer graphene (FLG) flakes. This encapsulation method allowed subsequent highly detailed Raman analysis that so far has only been possible by means of in-situ Raman measurements. The acquired data proved that FLG capping serves as an effective passivation layer, preventing degradation of silicene for up to several days. Additional polarization-dependent measurements showed that the symmetry properties of silicene remain unaltered by the capping process. Furthermore, the experiments demonstrated the compatibility between graphene and silicene, representing a step forward towards the possible integration of silicene into 2D heterostructures.