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HL: Fachverband Halbleiterphysik
HL 3: Semiconductor lasers and Photonic crystals
HL 3.1: Vortrag
Montag, 1. April 2019, 09:30–09:45, H33
High-speed InP-based 1.55 µm quantum dot lasers with and without tunnel injection quantum wells — •Sven Bauer1, Vitalii Sichkovskyi1, Ori Eyal2, Gadi Eisenstein2, and Johann Peter Reithmaier1 — 1Technische Physik, Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany — 2Andrew and Erna Viterbi Department of Electrical Engineering, Technion, Haifa 32000, Israel
The performance of directly modulated quantum dot (QD) lasers, used for 1.55 µm telecommunication, is limited by the intraband carrier relaxation time. To improve it, one might use a so-called tunnel injection (TI) scheme. Carriers are captured and relax in a quantum well (QW) and tunnel through a thin barrier for recombination into the QDs. After a careful optimization process, the coupled QW-QD structures, consisting of an InGaAs QW, a thin InAlGaAs barrier, both lattice matched to InP, and InAs QDs, were implemented in a high-speed laser design. A corresponding QD reference laser was grown as well. The structure specific static parameters were extracted from the power current characteristics of the processed broad area lasers. Furthermore, the effect of different rapid thermal annealing temperatures was investigated. The small signal modulation properties of ridge waveguide lasers were measured and significant differences could be evaluated for both laser types. Large signal modulation experiments revealed a high modulation rate for both laser types.