Regensburg 2019 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 3: Semiconductor lasers and Photonic crystals
HL 3.3: Vortrag
Montag, 1. April 2019, 10:00–10:15, H33
Characterization of the nonlinear optical properties of a semiconductor disk laser — •Christian Kriso1, Sascha Kress1, Tasnim Munshi1, Marius Großmann2, Roman Bek2, Michael Jetter2, Peter Michler2, Wolfgang Stolz1, Martin Koch1, and Arash Rahimi-Iman1 — 1Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, D-35032 Marburg, Germany — 2Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, D-70569 Stuttgart, Germany
The quest for pulsed laser sources with steadily higher peak powers and shorter pulse durations is subject of ongoing research efforts. Semiconductor disk lasers or vertical-external-cavity surface-emitting-lasers (VECSELs) are a particularly attractive laser platform for this purpose, since they combine the wavelength flexibility typical for semiconductor lasers, the beam qualities known from solid-state lasers and the desired potential mass producibility for applications like frequency combs or multi-photon imaging.
Besides conventional passive mode-locking of VECSELs with semiconductor-saturable-absorber mirrors (SESAMs), a new mode-locking phenomenon has been observed in these lasers in the absence of such SESAMs. Based on the assumption that Kerr-lensing in the VECSEL chip might explain "self-mode-locked" operation, we systematically characterize the nonlinear refractive index of a gain chip and discuss the impact of the gain chip's microcavity on possible Kerr-lens mode-locking of VECSELs.