Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.11: Poster

Mittwoch, 3. April 2019, 17:30–20:00, Poster E

Micro-photoluminescence spectroscopy of microsctructured light emitters based on InGaN quantum wells — •Jonas Quatuor¹, Mursal A. Baggash¹, Ulrich T. Schwarz¹, Jana Hartmann², and Andreas Waag² — ¹Institute of Physics, Chemnitz University of Technology — ²Institute for Semiconductor Technology, Braunschweig University of Technology

Light emitters with mictrostroctured, threedimensional surface have several advantages with respect to such with planar ones: the InGaN quantum wells on side facets of microstructures like µ-rods or fins may be of semi- or nonpolar orientation with reduced internal fields, the ratio of QW area to wafer area is increased, threading dislocation density in the QWs is reduced, and the indium uptake during epitaxy is enhanced. We investigate the spectral properties (wavelength shift, intensity, linewidth) of the InGaN QW by micro-photoluminescence. From temperature dependent droop measurements we estimate the internal quantum efficiency (IQE). Nonpolar QWs on sidewalls emit polarized light because of the lower symmetrie. From excitation density dependent measurements of the degree of polarization, we determine the carrier density.