Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 35: HL Poster II
HL 35.25: Poster
Mittwoch, 3. April 2019, 17:30–20:00, Poster E
CVD based growth of ZnO layers on Si(111) with AlN nucleation layer — •Matthias Töws1, Okan Gelme1, Raphael Müller1, Florian Huber1, Jan-Patrick Scholz2, Ulrich Herr2, and Klaus Thonke1 — 1Institute of Quantum Matter / Semiconductor Physics Group, Ulm University, Germany — 2Institute for Functional Nanosystems, Ulm University, Germany
In the present work, zinc oxide (ZnO) layers were grown by methane (CH4) based CVD on Si(111) substrate with aluminum nitride (AlN) nucleation layer. For the AlN nucleation layer growth temperature, III-V-ratio, and the growth duration of the MOVPE process were varied. The resulting nucleation layers were analyzed by scanning electron microscopy and atomic force microscopy. Afterwards, the different nucleation layers were overgrown with ZnO. In order to find the best combination of growth parameters for both processes, a whole series of growth parameters for the ZnO deposition was tested on each of the nucleation types. For the evaluation of the sample quality, scanning electron microscopy, electron backscatter diffraction, high resolution X-ray diffraction, and low temperature photoluminescence measurements were performed.