Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 36: II-VI- and III-V-semiconductors

HL 36.13: Vortrag

Donnerstag, 4. April 2019, 12:45–13:00, H31

Laser-assisted local metalorganic vapor phase epitaxy — •Max Trippel, Matthias Wieneke, Armin Dadgar, and André Strittmatter — Institut für Physik, Otto-von-Guericke Universität Magdeburg- Universitätsplatz 2, 39106 Magdeburg Germany

Up to now, an unsolved problem of integration between Si and III/V semiconductor materials is the misfit between optimum III/V growth conditions and Si electronics. We propose laser-assisted local III/V epitaxy based on metalorganic vapor phase epitaxy (MOVPE) to resolve the growth-temperature related incompatibility of both worlds. GaAs-on-Si has been chosen as the first epitaxial system to study due to its well-known behavior in MOVPE.

In order to identify conditions where local epitaxial GaAs growth proceeds similar to full wafer growth, finite element multi-physics simulations were performed. We therefore calculated temperature profiles, distribution of species, and resulting reaction rates within the heated area. A reduced lateral extension of the growth area with respect to the heated area is found which correlates with the pyrolithic decomposition of the metalorganics.

Accordingly, we have developed our own MOVPE tool. Our epitaxy system comprises a conventional gas mixing cabinet, a stainless-steel vertical growth reactor, a xyz-movable substrate holder, and a temperature-controlled laser-heater. The substrate is clamped vacuum-tight against a non-rotating susceptor plate and can be cooled with helium. Pyrometric temperature measurement is done in the center of the laser spot being as small as 150 m in diameter.