Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: II-VI- and III-V-semiconductors
HL 36.7: Vortrag
Donnerstag, 4. April 2019, 11:15–11:30, H31
Role of Bismuth in the Bandstructure of Ga(As,Bi) studied by Photomodulated Reflectance Spectroscopy — •Frederik Otto1, Julian Veletas1, Lukas Nattermann2, Kerstin Volz2, and Sangam Chatterjee1 — 1Institute of Experimental Physics I, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany — 2Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, Hans-Meerwein-Str., D-35032 Marburg, Germany
Dilute bismuth-containing III-V semiconductor alloys exhibit several novel electronic properties, such as a rapidly reducing band gap with increasing bismuth concentration. This allows for a wide scope of band gap engineering in the near infrared (NIR) region. This is of significant interest for optimizing the efficiency of semiconductor lasers in the NIR. In particular, the incorporation of bismuth increases the spin-orbit split-off energy. This, in turn, potentially suppresses non-radiative Auger recombination. In addition, the incorporation of bismuth causes a heavy-hole (hh) and light-hole (lh) splitting at the Γ-point due to a reduction in tetrahedral symmetry of the zinc-blende structure. We conducted photomodulated reflectance and photoluminescence spectroscopy on a series of MOVPE grown Ga(As,Bi)-samples with varying bismuth concentration in order to get detailed information about the bismuth-induced change in band gap energy and the optical properties connected to the lifting of the hh-lh degeneracy at the Γ-point.