Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: II-VI- and III-V-semiconductors
HL 36.8: Vortrag
Donnerstag, 4. April 2019, 11:30–11:45, H31
Tunable plasmonics in heavily doped GaAs via ion implantation and sub-second annealing — •juanmei duan1,2, mao wang1,2, manfred helm1, wolfgang skorupa1, shengqiang zhou1, and slawomir prucnal1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany — 2Technische Universität Dresden, D-01062 Dresden, Germany
Semiconductors with ultra-high doping level are attractive for the near- and mid-infrared plasmonics. The III-V compound semiconductors are characterized by high electron mobility and low effective mass, where the plasma edge can be tuned by tailoring the doping level. In this work, we present the formation of heavily doped p- and n-type GaAs utilizing ion implantation of Te, S and Zn, followed by sub-second annealing. We demonstrate that either the millisecond range flash lamp annealing (solid phase epitaxy) or nanosecond range pulsed laser annealing (liquid phase epitaxy) is able to recrystallized the implanted layers and electrically activate the dopants.The carrier concentration in the heavily doped p- and n-type GaAs with sub-second annealing treatment is in the range of 1019~1020 cm-3. The plasmonic properties of implanted and annealed GaAs samples were investigated by Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The obtained ultra-highly GaAs films display a room-temperature plasma frequency above 2200 cm-1, which enables to exploit the plasmonic properties of GaAs for sensing in the mid-infrared spectral range.