Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 36: II-VI- and III-V-semiconductors

HL 36.9: Vortrag

Donnerstag, 4. April 2019, 11:45–12:00, H31

Zeeman splitting features of novel III-V wurtzite materials — •Paulo E. Faria Junior¹, Davide Tedeschi², Marta De Luca^2,3, Benedikt Scharf^1,4, Antonio Polimeni², and Jaroslav Fabian¹ — ¹University of Regensburg — ²Sapienza Università di Roma — ³University of Basel — ⁴University of Würzburg

The behavior of semiconductors under external magnetic fields provides valuable insight into their spin-dependent properties. Here, we investigate the Zeeman splitting features of novel III-V wurtzite materials, namely InP, InAs, and GaAs[1]. First, we present the values of the effective g-factors highlighting the important contribution of spin-orbit coupling effects. Moving to the Landau level picture, we discuss the intrinsic common features that give rise to the nonlinear Zeeman splitting, recently explained in magneto photoluminescence experiments for InP nanowires[2]. Focusing on the important Landau level coupling we derive an analytical model to fit the experimental nonlinear Zeeman splitting, applying it to InP and GaAs. We show that our analytical model correctly describes the physics of the nonlinear features and extrapolating our results, we predict the Zeeman splitting to reach a maximum value at magnetic fields larger than 30 T. [1] Faria Junior et al., arXiv:1811.09288 (2018). [2] Tedeschi et al., arXiv:1811.04922 (2018). Supported by: Alexander von Humboldt Foundation, Capes (grant No. 99999.000420/2016-06), SFB 1277 (B05), SFB 1170 'ToCoTronics', the ENB Graduate School on Topological Insulators, Awards2014 and Avvio alla Ricerca (Sapienza Università di Roma).