Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 38: Organic semiconductors
HL 38.1: Vortrag
Donnerstag, 4. April 2019, 09:30–09:45, H33
Quantitative Analysis of the Density of Trap States in Organic Semiconductors by Electrical Transport Measurements on Low-Voltage Thin-Film Transistors — •Michael Geiger1, Lukas Schwarz1, Thomas Ferschke2, Ute Zschieschang1, Dirk Manske1, Jens Pflaum2,3, Jürgen Weis1, Hagen Klauk1, and Ralf Thomas Weitz4,5 — 1Max Planck Institute for Solid State Research, Stuttgart, Germany — 2Experimental Physics VI, Julius-Maximilian University, Würzburg, Germany — 3ZAE Bayern, Würzburg, Germany — 4Faculty of Physics, Ludwig Maximilians University, München, Germany — 5NanoSystems Initiative Munich (NIM) and Center for NanoScience (CeNS), Ludwig Maximilians University, München, Germany
We present an extension to an existing method to convert a measured transfer curve of a field-effect transistor to the underlying density-of-trap-states (trap DOS) function [1]. A comparison between thin-film transistors (TFTs) with high- and low-voltage operation confirms the validity of the original method for high-voltage transistors, but also the need for the extended method for the reliable extraction of the trap DOS in low-voltage transistors. Furthermore, we developed a method to systematically control the surface roughness of the gate dielectric in our TFTs and then used our extended method to investigate the correlation between the surface roughness of the gate dielectric and the trap DOS in the organic semiconductor layer and the implications of the surface roughness for the TFT performance.
[1] M. Grünewald et al., Phys. Stat. Sol. B 100, K139 (1980).