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Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 4: Focus Session: Oxide Semiconductors for Novel Devices I (joint session HL/DS)

HL 4.1: Hauptvortrag

Montag, 1. April 2019, 09:30–10:00, H34

The role of suboxide kinetics and thermodynamics for the catalysis and facet formation during the molecular beam epitaxy of oxides — •Oliver Bierwagen — Paul-Drude-Institut für Festkörperelektronik, Leibniz Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7, 10117 Berlin, Germany.

Based on its wide band gap of Eg=4.7 eV Ga2O3 is a promising oxide semiconductor for novel applications such as power electronics and UV detection. Band-gap engineering by alloying with In2O3 (Eg=2.7 eV) allows tuning the detection wavelength and enable heterostructure devices. Thin film growth of these oxides by molecular beam epitaxy (MBE) enables the high material quality (purity and crystallinity) required for novel applications. This contribution shows how the intermediate formation and desorption kinetics of Ga2O and In2O limits the MBE growth rate of Ga2O3 (and of In2O3 to a less extent).[1] Nevertheless, the stronger Ga-O than In-O bonds thermodynamically leads to a favorable incorporation of Ga into the alloy (InxGa1−x)2O3.[2] The collaborative effect of these kinetics and thermodynamics is shown to lift the growth rate limitation of Ga2O3 in the presence of an additional In-flux by metal-exchange catalysis.[3,4] Finally, the impact of the metal-to-oxygen flux ratio on the anisotropy of surface free energy is shown to control the formation of surface facets on both oxides.[4,5] [1] Vogt et al., Phys. Rev. Mater. 2, 120401(R) (2018). [2] Vogt et al., APL Mater. 4, 086112 (2016). [3] Vogt et al., Phys. Rev. Lett. 119, 196001 (2017). [4] Mazzolini et al., APL Mater. 7, 022511 (2019). [5] Bierwagen et al., J. Phys.: Condens. Matter 28, 224006 (2016).

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