Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 41: Heterostructures, interfaces, and surfaces
HL 41.8: Vortrag
Donnerstag, 4. April 2019, 17:00–17:15, H31
Single atomic layer removal via mechanochemical reactions — •Lei Chen1, Seong H. Kim2, and Linmao Qian1 — 1Southwest Jiaotong University, No. 111, Erhuan Road, Chengdu, Sichuan, China — 2N349, MSC, Pollock Road, University Park, Pennsylvania, USA
Nanomanufacturing process with an ultra-high precision is of paramount importance for new development of nanoelectronics with unique functionalities. Here, we demonstrate a mask-less and chemical-free nanolithography process for regio-specific removal of atomic layers on 2D material and crystalline materials surfaces via shear-induced mechanochemical reactions. Since chemical reactions involve only the topmost atomic layer exposed at the interface, the removal of single atomic layer is possible and the crystalline lattice or structure beneath the processed area remains intact without subsurface structural damages. There are two mechanochemical wear processes depending on materials. For the materials which can react with the counterface, such as graphite or single crystalline silicon, the atom-by-atom removal process is that the first atomic layer is removed preferentially through the formation and dissociation of interfacial bridge bonds. Differently, for other material, like CaF2, the stress-enhanced chemical reaction with surrounding water results in the formation of softening layer on the outermost surface which can be preferentially removed under mechanical interaction. This study advances research toward nanofabrication with single atomic layer precision, opening new opportunities for advanced nanoelectronics with new functionalities.