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Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 42: Quantum dots and wires: Preparation and characterization

HL 42.4: Vortrag

Donnerstag, 4. April 2019, 15:45–16:00, H34

Temperature controlled phase transition in single Ag2Se nanowires — •Maximilian Schwarz, August Dorn, and Alf Mews — Institute of Physical Chemistry, University of Hamburg, Germany

One-dimensional nanostructures grown via the solution-liquid-solid method (SLS) offer great application in electronic devices given the variety of materials and a well-established and low-cost synthetic route. Fine-tuning the characteristics of individual nanowires makes them suitable for numerous fields of interest. At this, silver selenide (Ag2Se) has gained the interest of many researchers for its temperature dependent change of conductivity, driven by a phase transition of the crystal lattice.

Here we show the fabrication of single nanowire transistor devices by growing cadmium selenide (CdSe) nanowires directly on substrates [1]. These act as a template to obtain silver selenide nanowires through a simple cation exchange reaction, leading to conductivities in the order of 10E5 S/m. The n-type character of the semiconductor is confirmed by field-effect transport measurements. Heating the device to 100 °C leads to a transformation of the crystal structure from monoclinic to body-centered cubic, resulting in a conductivity enhancement of 50 %. Adjusting the degree of cation exchange and the operating temperature allows for precise control of the electronic properties of single nanowire devices. Hereby, the system can be adapted to the desired application.

[1] A. Dorn et al., Advanced Materials, 2009, 21 (34), pp 3479-3482

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