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Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 42: Quantum dots and wires: Preparation and characterization

Donnerstag, 4. April 2019, 15:00–17:15, H34

15:00 HL 42.1 Monolithic co-integration of III-V-based structures on silicon using multiple step relaxation technique — •Ramasubramanian Balasubramanian, Vitalii Sichkovskyi, Gadi Eisenstein, and Johann Peter Reithmaier
15:15 HL 42.2 GaAs based quantum dot structures for VECSEL and MIXSEL applications — •Tanja Finke, Vitalii Sichkovskyi, Cesare Alfieri, Léonard Krüger, Jacob Nürnberg, Matthias Golling, Ursula Keller Keller, and Johann Peter Reithmaier
15:30 HL 42.3 Tuning the emission energy of self-assembled low density In(Ga)As quantum dots — •Timo Langer, Nandlal Sharma, and Dirk Reuter
15:45 HL 42.4 Temperature controlled phase transition in single Ag2Se nanowires — •Maximilian Schwarz, August Dorn, and Alf Mews
  16:00 15 min. break
16:15 HL 42.5 Heterointegration of III-V materials on silicon substrates using quantum dot strain relaxation layers — •Cedric Corley, Vitalii Sichkovskyi, and Johann Peter Reithmaier
16:30 HL 42.6 Multi-probe electrical characterization of axial pn-junction in GaAs nanowires — •Andreas Nägelein, Juliane Koch, Cornelia Timm, Matthias Steidl, Peter Kleinschmidt, and Thomas Hannappel
  16:45 HL 42.7 The contribution has been moved to HL 45.68.
17:00 HL 42.8 Quantum dot-microlenses and -mesas for single-photon sources operating at telecom wavelength — •Nicole Srocka, Jan Große, Pawel Mrowinski, Anna Musial, David Quandt, André Strittmatter, Grzegorz Sek, Sven Rodt, and Stephan Reitzenstein
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