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Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 42: Quantum dots and wires: Preparation and characterization

HL 42.6: Vortrag

Donnerstag, 4. April 2019, 16:30–16:45, H34

Multi-probe electrical characterization of axial pn-junction in GaAs nanowires — •Andreas Nägelein, Juliane Koch, Cornelia Timm, Matthias Steidl, Peter Kleinschmidt, and Thomas Hannappel — Institute of Physics, TU Ilmenau, 98693 Ilmenau, Germany

Charge separating contacts in nanowires (NWs) are crucial for all future optoelectronic devices. To receive high efficiencies, suitable doping profiles as well as abrupt junctions are required. In this work, multi-probe electrical characterizations were conducted on GaAs-NWs with axial pn-junction. By the utilization of a multi-tip scanning tunneling microscope (MT-STM), which is equipped with a scanning electron microscope (SEM), four tips can be controlled via nanopositioners at the nanoscale. With this setup it is possible to perform four-point probe measurement on single freestanding NWs.

Besides the non-linear IV-characteristic, we detected a threshold voltage, which correlates to the forward bias of the GaAs-pn-junction. Local ideality factors of the diode can be extracted from the IV-curves, which enable a classification of the quality of the diode. By performing four-point probe measurements axial resistance profiles were recorded, which are proportional to the axial doping profile of single NWs. The doping concentration of the p- and n-doped region was determined, as well as the position and width of the charge separating contact. The latter was also made visible with electron beam induced current (EBIC) images.

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