Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 42: Quantum dots and wires: Preparation and characterization
HL 42.1: Vortrag
Donnerstag, 4. April 2019, 15:00–15:15, H34
Monolithic co-integration of III-V-based structures on silicon using multiple step relaxation technique — •Ramasubramanian Balasubramanian1, Vitalii Sichkovskyi1, Gadi Eisenstein2, and Johann Peter Reithmaier1 — 1Institute of Nanostructure Technologies and Analytics (INA), Technische Physik, CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany — 2Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion, Haifa 32000, Israel
Monolithic co-integration of group III-V materials on silicon (Si) aims at integrating advantages of both in a single chip. Si possesses excellent electronic, thermal and mechanical properties, whereas group III-V materials exhibit excellent photonic properties due to their direct band gap. Development of defects due to the difference in thermal expansion coefficient and lattice constants between III-V materials and Si could be overcome by the use of strain relaxation technique. Here we report on GaAs buffer layer followed by InGaAs/GaAs strained layer super lattices (SLS) directly grown on 5° off-cut Si wafers by MBE. The quality of grown structures is examined by transmission electron microscopy (TEM), atomic force microscopy and photo luminescence (PL). TEM studies have shown an efficient dislocation filtering by SLS layers. Optically active InGaAs quantum dots grown on top of such structures showed PL properties comparable to InGaAs quantum dots grown directly on GaAs substrates.