DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2019 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 42: Quantum dots and wires: Preparation and characterization

HL 42.2: Vortrag

Donnerstag, 4. April 2019, 15:15–15:30, H34

GaAs based quantum dot structures for VECSEL and MIXSEL applications — •Tanja Finke1, Vitalii Sichkovskyi1, Cesare Alfieri2, Léonard Krüger2, Jacob Nürnberg2, Matthias Golling2, Ursula Keller Keller2, and Johann Peter Reithmaier11Institute of Nanostructure Technologies and Analytics (INA), Technische Physik, CINSaT, University of Kassel, Germany — 2Institute for Quantum Electronics, Ultrafast Laser Physics Laboratory, ETH Zürich, Switzerland

By integration of a semiconductor saturable absorber mirror (SESAM) into a vertical external cavity surface emitting lasers (VECSEL), one can form a so-called mode-locked integrated external-cavity surface emitting laser (MIXSEL). With this approach, a very compact ultra-short high-power fs laser source for frequency comb generation can be realized. By using quantum dots (QDs) for the gain and absorber regions, the material properties can be tailored by geometrical parameters of the QDs. The QDs gain material was optimized by MBE towards high dot density and narrow photo luminescence (PL) emission. The influence of the growth parameters like growth temperature and In content on the optical and morphological properties of QDs was studied by PL and AFM, respectively. For SESAM structures QDs test samples with different designs were grown on DBR mirrors and characterized by reflectivity and pump-probe experiments. Fast recovery time of only 10 ps and good saturation parameters close to QW based SESAMs were achieved. Finally, all the sections, including high quality DBR mirrors were integrated into a single VECSEL structure.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2019 > Regensburg