Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 45: HL Posters III

HL 45.13: Poster

Donnerstag, 4. April 2019, 18:30–21:00, Poster E

Surface potential distribution studies on Cu(In,Ga)Se2 solar cell cross sections with Kelvin Probe Force Microscopy — •Jonas Schundelmeier1, Jasmin Seeger1, Wolfram Witte2, Dimitrios Hariskos2, Oliver Kiowski2, Heinz Kalt1, and Michael Hetterich1,31Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70563 Stuttgart, Germany — 3Light Technology Institute, KIT, 76131 Karlsruhe, Germany

The efficiency of Cu(In,Ga)Se2 (CIGS) thin-film solar cells might be further improved by the use of alternatives compared to the CdS buffer layer as well as by changing the gallium concentration within the CIGS absorber. In order to investigate the influence of these modifications on the potential distribution through all the layers of the devices, Kelvin Probe Force Microscopy (KPFM) on CIGS cross sections is employed. Potential distributions for three different Ga concentrations of the absorber and for different solution-grown buffer layer materials (CdS, Zn(O,S) and InxSy) are compared, enabling conclusions about the influence of the mentioned parameters on the diffusion voltage and the Fermi energy within the absorber.

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