Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 45: HL Posters III

HL 45.33: Poster

Donnerstag, 4. April 2019, 18:30–21:00, Poster E

NV-centers, embedded in a diamond transistor structure — •Dennis Oing1, Martin Geller1, Stefan Borgsdorf2, Ulrich Köhler2, Nicolas Wöhrl1, and Axel Lorke11Faculty of Physics and CENIDE, University of Duisburg-Essen, Lotharstr. 1, 47057 Duisburg, Germany — 2Institut für Experimentalphysik IV - AG Oberflächen, Ruhr-Universität Bochum, 44780 Bochum

Nitrogen-vacancy-centers (NV-centers) in diamond are promising candidates for applications in quantum information technology.
So far, mostly optical spectroscopy and read-out of NV-centers in diamond have been performed and three different charge states were observed. However, electrical control and read-out of the charge states has been proven to be difficult.
In this contribution, we present a transistor-like structure in diamond that allows us to electrically control the charge state of the NV-centers and which could have the potential for electrical read-out and manipulation.
The sample consists of bulk diamond with NV-centers, where a hydrogen termination on the surface induces a two-dimensional hole gas as a conductive surface layer. Reactive ion etching was used to define a mesa and two different ion implantation steps to form a graphite electrode 95 nm and the NV-centers 10 nm below the surface. After implantation the sample is coated with a thin aluminium oxide layer and annealed in high vacuum. We show device characterization like IV-characteristics, Raman spectroscopy and gate dependent photoluminescence.

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