Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 45: HL Posters III

HL 45.37: Poster

Donnerstag, 4. April 2019, 18:30–21:00, Poster E

Engineering and Resonant Excitation of Highly Coherent Spin Defects in Silicon Carbide — •C. Kasper1, A. Sperlich1, T. Ohshima2, V. Soltamov1, G. V. Astakhov1,3, and V. Dyakonov11Experimental Physics VI, Julius Maximilian University of Würzburg — 2National Institutes for Quantum and Radiological Science and Technology, Takasaki — 3Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf

Quantum centers in silicon carbide (SiC) have been demonstrated to be more than just the hampering defects for device performance. With their long spin coherence times [1] and the possibility of downscaling to single-photon source level [2], they have proven themselves to be promising candidates for a multitude of quantum information applications. By using the pulsed-ODMR technique we compare the two main spin-coherence parameters (T1 and T2) of silicon vacancies in SiC created with neutron, electron and proton irradiation in a broad range of silicon vacancy densities. Additionally we examine the influence of sample annealing and tuning of the laser excitation-wavelength on the ODMR contrast and the coherence properties in several potentially interesting SiC polytypes, 4H, 6H and 15R. Our results give an insight into the effects of irradiation method, sample annealing and excitation wavelength on the spin-coherence properties of silicon vacancies in SiC and hence allow their optimization for a concrete task.

[1] Simin et al., Phys. Rev. B 95, 161201(R) (2017)

[2] F. Fuchs et al., Nature Commun. 6, 7578 (2015)

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