Regensburg 2019 – wissenschaftliches Programm
HL 45.40: Poster
Donnerstag, 4. April 2019, 18:30–21:00, Poster E
Defect-affected Current in Silicon Carbide: Towards Photoelectric Spin Readout — •M. Hollenbach1,2,3, C. Kasper3, A. Sperlich3, M. Takahiro4, T. Ohshima4, V. Dyakonov3, and G.V. Astakhov1,3 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam and Materials Research, Dresden — 2Technische Universität Dresden, Dresden — 3Experimental Physics VI, Julius-Maximilians-Universität Würzburg, Würzburg — 4National Institutes for Quantum and Radiological Science and Technology (QST, formerly Japan Atomic Energy Agency), Takasaki, Japan
Silicon carbide (SiC) is a technologically advanced wide bandgap semiconductor for high-power and high-temperature electronics and is envisioned to be a viable candidate for solid-state quantum information applications. At present, laser excitation as well as optical readout of the atomic-scale defects, localized within the bandgap, are typically based on confocal microscopy. In this study, we implemented a hybrid detection method, allowing the direct light induced photoelectric readout of the silicon defects (VSi) in SiC. Here, we characterize particularly 4H-SiC diodes with varying spatial distribution introduced by electron irradiation with regard to their optical and electrical properties. By analyzing I-V-characteristics, photoluminescence spectra as well as optically and electrically detected magnetic resonance (ODMR, EDMR) of active VSi centers, we identify an irradiation threshold to boost diodes with sufficient quantity of VSi for nanotesla magnetic field sensing applications.