Regensburg 2019 – wissenschaftliches Programm
HL 45.44: Poster
Donnerstag, 4. April 2019, 18:30–21:00, Poster E
Optical properties of implanted transition-metal impurities in SiC — •Zhen Shang1,2, Yonder Berencén1, Shengqiang Zhou1, and Georgy Astakhov1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 2Technische Universität Dresden, Dresden, Germany
Atomic-scale defects in silicon carbide, such as silicon vacancy (Vsi), are attracting worldwide attention because of their potential application in quantum technology. These defects can be used as optically addressable single photon emitters at room temperature. They are also considered as stable solid-state spin qubits because its spin state can be easily manipulated. Generally, these defects can be divided into two categories, the intrinsic defects such as Vsi and the transition-metal impurities-related defects such as titanium or vanadium related defects. For the intrinsic defects, the optical and spin properties as well as the fabrication method have been well investigated. However, the investigation of the transition-metal impurities in silicon carbide still remains elusive. Here we introduce transition-metal impurities into SiC by ion implantation and subsequent annealing. We use irradiation fluence of vanadium and titanium up to 1e17 and thermal annealing up to 1700°C. We investigate the optical properties of the created defects, and compare the relative intensities of the zero-phonon lines to those in reference samples, where titanium- and vanadium-related defects are incorporated during growth. This work is the first step for the realization of single photon emission and spin manipulation from vanadium- and titanium-related defects in SiC.